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| (R) BSS44 SILICON PNP TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T case 25 o C T amb 25 o C Storage Temperature Max. Operating Junction Temperature Value - 65 - 60 -6 -5 5 0.87 -65 to 200 200 Unit V V V A W W o o C C 1/4 December 2000 BSS44 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max 35 200 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE =0) Test Conditions V CE = -60 V I C = -1 mA -65 Min. Typ. Max. -0.5 Unit A V V (BR)CBO Collector-base Breakdown Voltage (I E = 0) V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO I C = -50 mA -60 V Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E =.- 1 mA I C = -0.5 A IC = - 5 A I C = -0.5 A IC = - 5 A I C = -0.5 A I C = -2 A I C = -5 A I C = -0.5 A IE = 0 f = 1 MHz I B = -50 mA I B = -0.5 A I B = -50 mA I B = -0.5 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -5 V V CB = 10 V -6 -0.1 -0.4 -0.8 -1.1 30 40 70 45 80 100 0.065 0.45 V V V V V V CE(sat) V BE(sat) h FE -1 -1.6 f T C CBO t on t off Transition Frequency Collector-base Capacitance Turn-on Time Turn-off Time MHz pF s s IC = -0.5 A V CC = -20 V I B1 = -IB2 = -50 mA Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BSS44 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 BSS44 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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